Aluminum oxynitride interfacial passivation layer for high-permittivity gate dielectric stack on gallium arsenide
10.1063/1.2388246
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Main Authors: | Zhu, M., Tung, C.-H., Yeo, Y.-C. |
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Other Authors: | NUS NANOSCIENCE & NANOTECH INITIATIVE |
Format: | Article |
Published: |
2014
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Online Access: | http://scholarbank.nus.edu.sg/handle/10635/50861 |
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Institution: | National University of Singapore |
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