In situ surface passivation of gallium nitride for metalOrganic chemical vapor deposition of high-permittivity gate dielectric

In situ surface passivation of gallium nitride for metalOrganic chemical vapor deposition of high-permittivity gate dielectric

10.1109/TED.2010.2084410

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Bibliographic Details
Main Authors: Liu, X., Chin, H.-C., Tan, L.-S., Yeo, Y.-C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
Gallium nitride (GaN)
in situ surface passivation
interface state density
Online Access:http://scholarbank.nus.edu.sg/handle/10635/82521
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Institution: National University of Singapore

Internet

http://scholarbank.nus.edu.sg/handle/10635/82521

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