In situ surface passivation of gallium nitride for metalOrganic chemical vapor deposition of high-permittivity gate dielectric

10.1109/TED.2010.2084410

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Main Authors: Liu, X., Chin, H.-C., Tan, L.-S., Yeo, Y.-C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
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Online Access:http://scholarbank.nus.edu.sg/handle/10635/82521
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spelling sg-nus-scholar.10635-825212023-10-27T08:38:16Z In situ surface passivation of gallium nitride for metalOrganic chemical vapor deposition of high-permittivity gate dielectric Liu, X. Chin, H.-C. Tan, L.-S. Yeo, Y.-C. ELECTRICAL & COMPUTER ENGINEERING Gallium nitride (GaN) in situ surface passivation interface state density 10.1109/TED.2010.2084410 IEEE Transactions on Electron Devices 58 1 95-102 IETDA 2014-10-07T04:30:21Z 2014-10-07T04:30:21Z 2011-01 Article Liu, X., Chin, H.-C., Tan, L.-S., Yeo, Y.-C. (2011-01). In situ surface passivation of gallium nitride for metalOrganic chemical vapor deposition of high-permittivity gate dielectric. IEEE Transactions on Electron Devices 58 (1) : 95-102. ScholarBank@NUS Repository. https://doi.org/10.1109/TED.2010.2084410 00189383 http://scholarbank.nus.edu.sg/handle/10635/82521 000285840100014 Scopus
institution National University of Singapore
building NUS Library
continent Asia
country Singapore
Singapore
content_provider NUS Library
collection ScholarBank@NUS
topic Gallium nitride (GaN)
in situ surface passivation
interface state density
spellingShingle Gallium nitride (GaN)
in situ surface passivation
interface state density
Liu, X.
Chin, H.-C.
Tan, L.-S.
Yeo, Y.-C.
In situ surface passivation of gallium nitride for metalOrganic chemical vapor deposition of high-permittivity gate dielectric
description 10.1109/TED.2010.2084410
author2 ELECTRICAL & COMPUTER ENGINEERING
author_facet ELECTRICAL & COMPUTER ENGINEERING
Liu, X.
Chin, H.-C.
Tan, L.-S.
Yeo, Y.-C.
format Article
author Liu, X.
Chin, H.-C.
Tan, L.-S.
Yeo, Y.-C.
author_sort Liu, X.
title In situ surface passivation of gallium nitride for metalOrganic chemical vapor deposition of high-permittivity gate dielectric
title_short In situ surface passivation of gallium nitride for metalOrganic chemical vapor deposition of high-permittivity gate dielectric
title_full In situ surface passivation of gallium nitride for metalOrganic chemical vapor deposition of high-permittivity gate dielectric
title_fullStr In situ surface passivation of gallium nitride for metalOrganic chemical vapor deposition of high-permittivity gate dielectric
title_full_unstemmed In situ surface passivation of gallium nitride for metalOrganic chemical vapor deposition of high-permittivity gate dielectric
title_sort in situ surface passivation of gallium nitride for metalorganic chemical vapor deposition of high-permittivity gate dielectric
publishDate 2014
url http://scholarbank.nus.edu.sg/handle/10635/82521
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