Self-aligned NiGeSi contacts on gallium arsenide for III-V MOSFETs

Self-aligned NiGeSi contacts on gallium arsenide for III-V MOSFETs

10.1149/1.3487634

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Bibliographic Details
Main Authors: Zhang, X., Guo, H., Chin, H.-C., Gong, X., Lim, P.S.Y., Yeo, Y.-C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/84166
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Institution: National University of Singapore

Internet

http://scholarbank.nus.edu.sg/handle/10635/84166

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