Aluminum oxynitride interfacial passivation layer for high-permittivity gate dielectric stack on gallium arsenide
10.1063/1.2388246
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| Main Authors: | , , |
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| Other Authors: | |
| Format: | Article |
| Published: |
2014
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| Online Access: | http://scholarbank.nus.edu.sg/handle/10635/50861 |
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| Institution: | National University of Singapore |
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