Statistical characterization and reliability modeling of novel high-K gate dielectric stacks
High-κ (HK) dielectric thin films are currently the most suited insulators for complementary metal-oxide-semiconductor (CMOS) technology in the sub-45nm technology nodes. Hafnium-based dielectrics are widely used in both advanced logic and memory device structures. While reliability studies to quali...
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| Format: | Theses and Dissertations |
| Language: | English |
| Published: |
2012
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| Online Access: | https://hdl.handle.net/10356/50738 |
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| Institution: | Nanyang Technological University |
| Language: | English |