Statistical characterization and reliability modeling of novel high-K gate dielectric stacks
High-κ (HK) dielectric thin films are currently the most suited insulators for complementary metal-oxide-semiconductor (CMOS) technology in the sub-45nm technology nodes. Hafnium-based dielectrics are widely used in both advanced logic and memory device structures. While reliability studies to quali...
Saved in:
Main Author: | Nagarajan Raghavan |
---|---|
Other Authors: | Pey Kin Leong |
Format: | Theses and Dissertations |
Language: | English |
Published: |
2012
|
Subjects: | |
Online Access: | https://hdl.handle.net/10356/50738 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | Nanyang Technological University |
Language: | English |
Similar Items
-
Role of grain boundary percolative defects and localized trap generation on the reliability statistics of high-κ gate dielectric stacks
by: Raghavan, Nagarajan, et al.
Published: (2013) -
Development and characterization of high-k dielectric/germanium gate stack
by: XIE RUILONG
Published: (2010) -
Gate stack engineering of germanium mosfets with high-K dielectrics
by: WU NAN
Published: (2010) -
Analysis of high-dielectric constant gate stack reliability for nanoscale CMOS devices application via scanning tunneling microscopy
by: Ong, Yi Ching
Published: (2009) -
Interface Engineering in the High-k Dielectric Gate Stacks
by: Wang, S., et al.
Published: (2014)