Statistical characterization and reliability modeling of novel high-K gate dielectric stacks

High-κ (HK) dielectric thin films are currently the most suited insulators for complementary metal-oxide-semiconductor (CMOS) technology in the sub-45nm technology nodes. Hafnium-based dielectrics are widely used in both advanced logic and memory device structures. While reliability studies to quali...

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Bibliographic Details
Main Author: Nagarajan Raghavan
Other Authors: Pey Kin Leong
Format: Theses and Dissertations
Language:English
Published: 2012
Subjects:
Online Access:https://hdl.handle.net/10356/50738
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Institution: Nanyang Technological University
Language: English

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