Simulation of post-breakdown transistor performance in ultrathin gate dielectrics-based nanoscale MOSFETs

• المؤلف الرئيسي: Yaw, Meng Kwan.
• مؤلفون آخرون: Pey Kin Leong
• التنسيق: Final Year Project
• اللغة: English
• منشور في: 2009
• الموضوعات: DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
• الوصول للمادة أونلاين: http://hdl.handle.net/10356/17188
• المؤسسة: Nanyang Technological University

The purpose of this project is to simulate the post-breakdown transistor performance in ultrathin gate dielectric. The simulator used was TSUPREM-4 and MEDICI, which is widely used in the semiconductor industry for simulation and analyze semiconductor processing. The simulation was done on a 0.13μm...