Post stress reliability in submicron MOSFET devices

• Main Authors: Chen, Tupei., Tse, Man Siu.
• Other Authors: School of Electrical and Electronic Engineering
• Format: Research Report
• Published: 2008
• Subjects: DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
• Online Access: http://hdl.handle.net/10356/2834
• Institution: Nanyang Technological University

In this project, we have conducted a systematic investigation of post-breakdown conduction and its instability in ultrathin SiO2 films as well as various studies of interface degradation, charge trapping and oxide barrier height change in deep submicron MOS devices with ultrathin gate oxide caused b...