Development of statistical model for baseband MOSFETs
In this work, backward propagation of variance (BPV) methodology is used to develop a statistical MOSFET model for 0.35um technology to account for global process variations based on electrical data from measurements of MOSFET test structures in scribe line module (SLM) of production wafers. BPV, co...
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| Format: | Theses and Dissertations |
| Language: | English |
| Published: |
2010
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| Online Access: | https://hdl.handle.net/10356/41399 |
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| Institution: | Nanyang Technological University |
| Language: | English |