Compact modeling of non-classical MOSFETs for circuit simulation
This thesis documents the compact models developed for SOI/FinFET/SiNW MOSFETs as well as Schottky barrier and dopant-segregated Schottky MOSFETs. The Unified Regional Modeling approach is extended from bulk MOSFETs to SOI MOSFETs as well as the next generation FinFET/SiNW MOSFETs. SOI-spec...
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| Format: | Theses and Dissertations |
| Language: | English |
| Published: |
2011
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| Online Access: | http://hdl.handle.net/10356/44550 |
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| Institution: | Nanyang Technological University |
| Language: | English |