Compact modeling of non-classical MOSFETs for circuit simulation

This thesis documents the compact models developed for SOI/FinFET/SiNW MOSFETs as well as Schottky barrier and dopant-segregated Schottky MOSFETs. The Unified Regional Modeling approach is extended from bulk MOSFETs to SOI MOSFETs as well as the next generation FinFET/SiNW MOSFETs. SOI-spec...

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書目詳細資料
主要作者: Zhu, Guojun.
其他作者: Zhou Xing
格式: Theses and Dissertations
語言:English
出版: 2011
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在線閱讀:http://hdl.handle.net/10356/44550
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