Compact modeling of non-classical MOSFETs for circuit simulation
This thesis documents the compact models developed for SOI/FinFET/SiNW MOSFETs as well as Schottky barrier and dopant-segregated Schottky MOSFETs. The Unified Regional Modeling approach is extended from bulk MOSFETs to SOI MOSFETs as well as the next generation FinFET/SiNW MOSFETs. SOI-spec...
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sg-ntu-dr.10356-445502023-07-04T16:22:38Z Compact modeling of non-classical MOSFETs for circuit simulation Zhu, Guojun. Zhou Xing School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering::Semiconductors This thesis documents the compact models developed for SOI/FinFET/SiNW MOSFETs as well as Schottky barrier and dopant-segregated Schottky MOSFETs. The Unified Regional Modeling approach is extended from bulk MOSFETs to SOI MOSFETs as well as the next generation FinFET/SiNW MOSFETs. SOI-specific effects, such as floating-body and self-heating effects, are physically modeled using both analytical and subcircuit approaches. The limitations of unipolar assumption are explored through TCAD simulation and a novel symmetrical imref correction is proposed to effectively remedy the unipolar assumption. A unified model for FinFET/SiNW MOSFETs is formulated. The Gummel symmetry issue in three terminal devices is essentially solved by the proposed effective drain-source voltage expression. The unified model is validated extensively with experiment data and has been coded in Verilog A for statistical and technology variation studies. A physicsbased single piece compact model for undoped Schottky barrier SiNW MOSFETs is formulated based on a quasi-2D surface potential solution and Miller-Good tunneling model. Unique ambipolar behavior is excellently reproduced. A unique subcircuit approach is proposed to physically model the dopant-segregation in Schottky SiNW MOSFETs. The model can not only reproduce the unique convex curvature in Ids-Vds characteristics, but also explain the process variations in particular the Schottky barrier height variations. The research demonstrated the unique advantage of the Unified Regional Modeling approach in modeling the next generation non-classical MOS devices. Doctor of Philosophy 2011-06-02T04:33:22Z 2011-06-02T04:33:22Z 2011 2011 Thesis http://hdl.handle.net/10356/44550 en 247 p. application/pdf |
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DRNTU::Engineering::Electrical and electronic engineering::Semiconductors Zhu, Guojun. Compact modeling of non-classical MOSFETs for circuit simulation |
description |
This thesis documents the compact models developed for SOI/FinFET/SiNW
MOSFETs as well as Schottky barrier and dopant-segregated Schottky MOSFETs.
The Unified Regional Modeling approach is extended from bulk MOSFETs to SOI
MOSFETs as well as the next generation FinFET/SiNW MOSFETs. SOI-specific
effects, such as floating-body and self-heating effects, are physically modeled using
both analytical and subcircuit approaches. The limitations of unipolar assumption are
explored through TCAD simulation and a novel symmetrical imref correction is
proposed to effectively remedy the unipolar assumption. A unified model for
FinFET/SiNW MOSFETs is formulated. The Gummel symmetry issue in three
terminal devices is essentially solved by the proposed effective drain-source voltage
expression. The unified model is validated extensively with experiment data and has
been coded in Verilog A for statistical and technology variation studies. A physicsbased
single piece compact model for undoped Schottky barrier SiNW MOSFETs is
formulated based on a quasi-2D surface potential solution and Miller-Good tunneling
model. Unique ambipolar behavior is excellently reproduced. A unique subcircuit
approach is proposed to physically model the dopant-segregation in Schottky SiNW
MOSFETs. The model can not only reproduce the unique convex curvature in Ids-Vds
characteristics, but also explain the process variations in particular the Schottky barrier
height variations. The research demonstrated the unique advantage of the Unified
Regional Modeling approach in modeling the next generation non-classical MOS
devices. |
author2 |
Zhou Xing |
author_facet |
Zhou Xing Zhu, Guojun. |
format |
Theses and Dissertations |
author |
Zhu, Guojun. |
author_sort |
Zhu, Guojun. |
title |
Compact modeling of non-classical MOSFETs for circuit simulation |
title_short |
Compact modeling of non-classical MOSFETs for circuit simulation |
title_full |
Compact modeling of non-classical MOSFETs for circuit simulation |
title_fullStr |
Compact modeling of non-classical MOSFETs for circuit simulation |
title_full_unstemmed |
Compact modeling of non-classical MOSFETs for circuit simulation |
title_sort |
compact modeling of non-classical mosfets for circuit simulation |
publishDate |
2011 |
url |
http://hdl.handle.net/10356/44550 |
_version_ |
1772827037978853376 |