Development of statistical model for baseband MOSFETs

• Main Author: Lim, Guan Hui
• Other Authors: Zhou Xing
• Format: Theses and Dissertations
• Language: English
• Published: 2010
• Subjects: DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
• Online Access: https://hdl.handle.net/10356/41399
• Institution: Nanyang Technological University

In this work, backward propagation of variance (BPV) methodology is used to develop a statistical MOSFET model for 0.35um technology to account for global process variations based on electrical data from measurements of MOSFET test structures in scribe line module (SLM) of production wafers. BPV, co...