Electrical properties of neodymium oxide/titanium dioxide and neodymium oxide/gadolinium silicate dielectric gate stack on silicon substrate

• Main Author: Lee, Vivian Sing Zhi.
• Other Authors: Alfred Tok Iing Yoong
• Format: Final Year Project
• Language: English
• Published: 2012
• Subjects: DRNTU::Engineering::Materials::Microelectronics and semiconductor materials
• Online Access: http://hdl.handle.net/10356/48413
• Institution: Nanyang Technological University

The problem with using single layer of high dielectric constant materials is the interfacial layer growth during thermal process of fabrication. The purpose of studying bilayer dielectric gate stack is because single layer can lead to interfacial layer growth during thermal process of fabrication....