Hafnium oxide based high-k dielectric gate stack

Hafnium oxide based high-k dielectric gate stack

Ph.D

Saved in:
Bibliographic Details
Main Author: LI QIN
Other Authors: PHYSICS
Format: Theses and Dissertations
Language:English
Published: 2010
Subjects:
High-k dielectric,Metal/HfO2/semiconductor,Band alignment,Schottky barrier height,X-ray photoelectron spectroscopy,Density functional theory
Online Access:http://scholarbank.nus.edu.sg/handle/10635/13035
Tags: Add Tag
No Tags, Be the first to tag this record!
Institution: National University of Singapore
Language: English

Internet

http://scholarbank.nus.edu.sg/handle/10635/13035

Similar Items