Hafnium oxide based high-k dielectric gate stack
Ph.D
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2010
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sg-nus-scholar.10635-130352017-10-21T09:32:13Z Hafnium oxide based high-k dielectric gate stack LI QIN PHYSICS ONG CHONG KIM High-k dielectric,Metal/HfO2/semiconductor,Band alignment,Schottky barrier height,X-ray photoelectron spectroscopy,Density functional theory Ph.D DOCTOR OF PHILOSOPHY 2010-04-08T10:29:23Z 2010-04-08T10:29:23Z 2008-02-20 Thesis LI QIN (2008-02-20). Hafnium oxide based high-k dielectric gate stack. ScholarBank@NUS Repository. http://scholarbank.nus.edu.sg/handle/10635/13035 NOT_IN_WOS en |
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National University of Singapore |
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High-k dielectric,Metal/HfO2/semiconductor,Band alignment,Schottky barrier height,X-ray photoelectron spectroscopy,Density functional theory |
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High-k dielectric,Metal/HfO2/semiconductor,Band alignment,Schottky barrier height,X-ray photoelectron spectroscopy,Density functional theory LI QIN Hafnium oxide based high-k dielectric gate stack |
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Ph.D |
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PHYSICS |
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PHYSICS LI QIN |
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Theses and Dissertations |
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LI QIN |
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LI QIN |
title |
Hafnium oxide based high-k dielectric gate stack |
title_short |
Hafnium oxide based high-k dielectric gate stack |
title_full |
Hafnium oxide based high-k dielectric gate stack |
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Hafnium oxide based high-k dielectric gate stack |
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Hafnium oxide based high-k dielectric gate stack |
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hafnium oxide based high-k dielectric gate stack |
publishDate |
2010 |
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http://scholarbank.nus.edu.sg/handle/10635/13035 |
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