Advanced CMOS technologies (high-k/metal gate stacks) for sub-22nm node

• المؤلف الرئيسي: Wu, Ling
• مؤلفون آخرون: Fan Weijun
• التنسيق: Theses and Dissertations
• اللغة: English
• منشور في: 2013
• الموضوعات: DRNTU::Engineering::Electrical and electronic engineering::Microelectronics
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/54848
• المؤسسة: Nanyang Technological University

A thermally grown silicon dioxide (SiO2), which forms the insulating layer in the metal-oxide-semiconductor field effect transistor (MOSFET), is considered as the heart of a MOSFET. It has been essential for the microelectronics revolution due to the following outstanding properties: high resistivit...