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Fan Weijun

Fan Weijun

Fan Weijun (, born 20 November 1978), is a former Chinese-born Hong Kong professional footballer. He was capable of playing at all outfield positions.

On 3 July 2014, Fan was charged with conspiracy to defraud in relation to a Senior Shield match the prior season. Later, on 24 September, he was acquitted by the Eastern Court. Provided by Wikipedia

1

Band structures and optical gain of InGaAsN/GaAsN strained quantum wells under electric field

Band structures and optical gain of InGaAsN/GaAsN strained quantum wells under electric field

by Fan, Weijun
Published 2013

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Conference or Workshop Item

2

Tensile-strain and doping enhanced direct bandgap optical transition of n+ doped Ge/GeSi quantum wells

Tensile-strain and doping enhanced direct bandgap optical transition of n+ doped Ge/GeSi quantum wells

by Fan, Weijun
Published 2014

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Article

3

Orientation dependence of electronic structure and optical gain of (11N)-oriented III-V-N quantum wells

Orientation dependence of electronic structure and optical gain of (11N)-oriented III-V-N quantum wells

by Fan, Weijun
Published 2013

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Article

4

GaAs/AlAs/AlGaAs quantum well infrared photodetector

GaAs/AlAs/AlGaAs quantum well infrared photodetector

by Fan, Weijun
Published 2008

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Research Report

5

Design of In[sub x]Ga[sub 1−x]As[sub 1−y]N[sub y]∕AlAs quantum cascade structures for 3.4 μm intersubband emission

Design of In[sub x]Ga[sub 1−x]As[sub 1−y]N[sub y]∕AlAs quantum cascade structures for 3.4 μm intersubband emission

by Dang, Y. X., Fan, Weijun
Published 2013

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Article

6

Electronic structures of superlattices under in-plane magnetic field

Electronic structures of superlattices under in-plane magnetic field

by Xia, Jian-Bai, Fan, Weijun
Published 2013

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Article

7

Comparison of electronic band structure and optical transparency conditions of InxGa1−xAs1−yNy∕GaAs quantum wells calculated by 10-band, 8-band, and 6-band k∙p models

Comparison of electronic band structure and optical transparency conditions of InxGa1−xAs1−yNy∕GaAs quantum wells calculated by 10-band, 8-band, and 6-band k∙p models

by Ng, S., Dang, Y., Yoon, S., Fan, Weijun
Published 2013

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Article

8

Effects of size and shape on electronic states of quantum dots

Effects of size and shape on electronic states of quantum dots

by Ngo, C., Yoon, S., Chua, S., Fan, Weijun
Published 2013

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Article

9

Effect of size and shape on electronic and optical properties of CdSe quantum dots

Effect of size and shape on electronic and optical properties of CdSe quantum dots

by Liu, Yincheng, Bose, Sumanta, Fan, Weijun
Published 2020

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Article

10

Optoelectronics of inverted type-I CdS/CdSe core/crown quantum ring

Optoelectronics of inverted type-I CdS/CdSe core/crown quantum ring

by Bose, Sumanta, Fan, Weijun, Zhang, Dao Hua
Published 2017

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Article

11

Influence of N doping on the Rashba coefficient, semiconductor-metal transition, and electron effective mass in InSb1−xNx nanowires : Ten-band k∙p model

Influence of N doping on the Rashba coefficient, semiconductor-metal transition, and electron effective mass in InSb1−xNx nanowires : Ten-band k∙p model

by Li, S., Xia, J., Zhang, X., Fan, Weijun
Published 2013

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Article

12

Band structures and optical gain of strained GaAs[sub x]P[sub 1−x−y]N[sub y]/GaP quantum wells

Band structures and optical gain of strained GaAs[sub x]P[sub 1−x−y]N[sub y]/GaP quantum wells

by Zhu, Yuan-Hui, Yu, Hongyu, Fan, Weijun
Published 2013

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Article

13

Band offsets at GaInP/AlGaInP(001) heterostructures lattice matched to GaAs

Band offsets at GaInP/AlGaInP(001) heterostructures lattice matched to GaAs

by Zhang, X. H., Chua, S. J., Fan, Weijun
Published 2013

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Article

14

Valence hole subbands and optical gain spectra of GaN/Ga1-xAlxN strained quantum wells

Valence hole subbands and optical gain spectra of GaN/Ga1-xAlxN strained quantum wells

by Li, M. F., Chong, T. C., Fan, Weijun
Published 2013

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Article

15

Theoretical insights into the amplified optical gain of hexagonal germanium by strain engineering

Theoretical insights into the amplified optical gain of hexagonal germanium by strain engineering

by Mayengbam, Rishikanta, Tan, Chuan Seng, Fan, Weijun
Published 2023

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Article

16

Optical properties of two-dimensional semi-conductive MXene Sc₂COₓ produced by sputtering

Optical properties of two-dimensional semi-conductive MXene Sc₂COₓ produced by sputtering

by Chen, Qiran, Zhang, Daohua, Pan, Jisheng, Fan, Weijun
Published 2021

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Article

17

Improved stability and efficiency of polymer-based selenium solar cells through the usage of tin(iv) oxide in the electron transport layers and the analysis of aging dynamics

Improved stability and efficiency of polymer-based selenium solar cells through the usage of tin(iv) oxide in the electron transport layers and the analysis of aging dynamics

by Liu, Wenbo, Yu, Fei, Fan, Weijun, Zhang, Qichun
Published 2022

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Article

18

Electric-field-induced semiconductor-semimetal phase transition of GeTe/SnSe van der Waals heterojunction

Electric-field-induced semiconductor-semimetal phase transition of GeTe/SnSe van der Waals heterojunction

by Du, Jingxue, Yang, Jing, Fan, Weijun, Shi, Lijie
Published 2023

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Article

19

Electric field tunable electron g factor and high asymmetrical Stark effect in InAs[sub 1−x]N[sub x] quantum dots

Electric field tunable electron g factor and high asymmetrical Stark effect in InAs[sub 1−x]N[sub x] quantum dots

by Fan, Weijun, Xia, Jian-Bai, Li, S. S., Zhang, X. W.
Published 2013

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Article

20

Giant and zero electron g factors of dilute nitride semiconductor nanowires

Giant and zero electron g factors of dilute nitride semiconductor nanowires

by Zhang, X. W., Li, S. S., Fan, Weijun, Xia, Jian-Bai
Published 2013

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Article

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