Design of In[sub x]Ga[sub 1−x]As[sub 1−y]N[sub y]∕AlAs quantum cascade structures for 3.4 μm intersubband emission

• Main Authors: Dang, Y. X., Fan, Weijun
• 其他作者: School of Electrical and Electronic Engineering
• 格式: Article
• 語言: English
• 出版: 2013
• 主題: Electrical and Electronic Engineering
• 在線閱讀: https://hdl.handle.net/10356/100771; http://hdl.handle.net/10220/18142

We report the design of an active region of InxGa1−xAs1−yNy /AlAs quantum cascade laser structure emitting in the near infrared wavelength range based on an eight-band k· p model. The InxGa1−xAs1−yNy /AlAs heterostructure system is of significant interest for the development of short wavelength q...