Design of In[sub x]Ga[sub 1−x]As[sub 1−y]N[sub y]∕AlAs quantum cascade structures for 3.4 μm intersubband emission

• Main Authors: Dang, Y. X., Fan, Weijun
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2013
• Subjects: Electrical and Electronic Engineering
• Online Access: https://hdl.handle.net/10356/100771; http://hdl.handle.net/10220/18142
• Institution: Nanyang Technological University

We report the design of an active region of InxGa1−xAs1−yNy /AlAs quantum cascade laser structure emitting in the near infrared wavelength range based on an eight-band k· p model. The InxGa1−xAs1−yNy /AlAs heterostructure system is of significant interest for the development of short wavelength q...