Design of In[sub x]Ga[sub 1−x]As[sub 1−y]N[sub y]∕AlAs quantum cascade structures for 3.4 μm intersubband emission

We report the design of an active region of InxGa1−xAs1−yNy /AlAs quantum cascade laser structure emitting in the near infrared wavelength range based on an eight-band k· p model. The InxGa1−xAs1−yNy /AlAs heterostructure system is of significant interest for the development of short wavelength q...

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Main Authors:	Dang, Y. X., Fan, Weijun
Other Authors:	School of Electrical and Electronic Engineering
Format:	Article
Language:	English
Published:	2013
Subjects:	Electrical and Electronic Engineering
Online Access:	https://hdl.handle.net/10356/100771 http://hdl.handle.net/10220/18142
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Institution:	Nanyang Technological University
Language:	English

id	sg-ntu-dr.10356-100771
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spelling	sg-ntu-dr.10356-1007712020-03-07T14:00:31Z Design of In[sub x]Ga[sub 1−x]As[sub 1−y]N[sub y]∕AlAs quantum cascade structures for 3.4 μm intersubband emission Dang, Y. X. Fan, Weijun School of Electrical and Electronic Engineering Electrical and Electronic Engineering We report the design of an active region of InxGa1−xAs1−yNy /AlAs quantum cascade laser structure emitting in the near infrared wavelength range based on an eight-band k· p model. The InxGa1−xAs1−yNy /AlAs heterostructure system is of significant interest for the development of short wavelength quantum cascade lasers due to its large conduction band discontinuity 1.5 eV and compatibility with the mature GaAs fabrication process. A detailed analysis of the intersubband transition energy within the conduction band as a function of layer thickness, composition, electric field, and temperature has been carried out. Finally, an optimized combination of In0.2Ga0.8As0.97N0.03 /AlAs three-coupled-well structure has been obtained. Under an applied field of 100 kV/cm and at room temperature, a shortest wavelength of 3.4 m has been achieved by making use of this system without introducing an upper lasing level beyond the X minima of the AlAs barrier Published version 2013-12-06T05:40:31Z 2019-12-06T20:27:56Z 2013-12-06T05:40:31Z 2019-12-06T20:27:56Z 2007 2007 Journal Article Dang, Y. X.,& Fan, W. (2007). Design of In[sub x]Ga[sub 1−x]As[sub 1−y]N[sub y]∕AlAs quantum cascade structures for 3.4 μm intersubband emission. Journal of Applied Physics, 101(8), 084504. 0021-8979 https://hdl.handle.net/10356/100771 http://hdl.handle.net/10220/18142 10.1063/1.2717130 en Journal of applied physics © 2007 American Institute of Physics. This paper was published in Journal Of Applied Physics and is made available as an electronic reprint(preprint) with permission of American Institute of Physics. The paper can be found at the following official DOI: http://dx.doi.org/10.1063/1.2717130. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law. 8 p. application/pdf
institution	Nanyang Technological University
building	NTU Library
country	Singapore
collection	DR-NTU
language	English
topic	Electrical and Electronic Engineering
spellingShingle	Electrical and Electronic Engineering Dang, Y. X. Fan, Weijun Design of In[sub x]Ga[sub 1−x]As[sub 1−y]N[sub y]∕AlAs quantum cascade structures for 3.4 μm intersubband emission
description	We report the design of an active region of InxGa1−xAs1−yNy /AlAs quantum cascade laser structure emitting in the near infrared wavelength range based on an eight-band k· p model. The InxGa1−xAs1−yNy /AlAs heterostructure system is of significant interest for the development of short wavelength quantum cascade lasers due to its large conduction band discontinuity 1.5 eV and compatibility with the mature GaAs fabrication process. A detailed analysis of the intersubband transition energy within the conduction band as a function of layer thickness, composition, electric field, and temperature has been carried out. Finally, an optimized combination of In0.2Ga0.8As0.97N0.03 /AlAs three-coupled-well structure has been obtained. Under an applied field of 100 kV/cm and at room temperature, a shortest wavelength of 3.4 m has been achieved by making use of this system without introducing an upper lasing level beyond the X minima of the AlAs barrier
author2	School of Electrical and Electronic Engineering
author_facet	School of Electrical and Electronic Engineering Dang, Y. X. Fan, Weijun
format	Article
author	Dang, Y. X. Fan, Weijun
author_sort	Dang, Y. X.
title	Design of In[sub x]Ga[sub 1−x]As[sub 1−y]N[sub y]∕AlAs quantum cascade structures for 3.4 μm intersubband emission
title_short	Design of In[sub x]Ga[sub 1−x]As[sub 1−y]N[sub y]∕AlAs quantum cascade structures for 3.4 μm intersubband emission
title_full	Design of In[sub x]Ga[sub 1−x]As[sub 1−y]N[sub y]∕AlAs quantum cascade structures for 3.4 μm intersubband emission
title_fullStr	Design of In[sub x]Ga[sub 1−x]As[sub 1−y]N[sub y]∕AlAs quantum cascade structures for 3.4 μm intersubband emission
title_full_unstemmed	Design of In[sub x]Ga[sub 1−x]As[sub 1−y]N[sub y]∕AlAs quantum cascade structures for 3.4 μm intersubband emission
title_sort	design of in[sub x]ga[sub 1−x]as[sub 1−y]n[sub y]∕alas quantum cascade structures for 3.4 μm intersubband emission
publishDate	2013
url	https://hdl.handle.net/10356/100771 http://hdl.handle.net/10220/18142
_version_	1681034797514752000

Design of In[sub x]Ga[sub 1−x]As[sub 1−y]N[sub y]∕AlAs quantum cascade structures for 3.4 μm intersubband emission

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