Band structures and optical gain of strained GaAs[sub x]P[sub 1−x−y]N[sub y]/GaP quantum wells

• Main Authors: Zhu, Yuan-Hui, Yu, Hongyu, Fan, Weijun
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2013
• Subjects: DRNTU::Engineering::Electrical and electronic engineering
• Online Access: https://hdl.handle.net/10356/100804; http://hdl.handle.net/10220/18172
• Institution: Nanyang Technological University

In the framework of effective mass Hamiltonian of semiconductor quantum well structures and band anticrossing model, we investigated the band structures of fully strained GaAsxP1−x−yNy /GaP quantum wells. The GaAsxP1−x−yNy could be widely modified to be direct-band gap or indirect-band gap by cha...