Band structures and optical gain of strained GaAs[sub x]P[sub 1−x−y]N[sub y]/GaP quantum wells

Band structures and optical gain of strained GaAs[sub x]P[sub 1−x−y]N[sub y]/GaP quantum wells

In the framework of effective mass Hamiltonian of semiconductor quantum well structures and band anticrossing model, we investigated the band structures of fully strained GaAsxP1−x−yNy /GaP quantum wells. The GaAsxP1−x−yNy could be widely modified to be direct-band gap or indirect-band gap by cha...

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Main Authors: Zhu, Yuan-Hui, Yu, Hongyu, Fan, Weijun
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2013
Subjects:
DRNTU::Engineering::Electrical and electronic engineering
Online Access:https://hdl.handle.net/10356/100804
http://hdl.handle.net/10220/18172
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Institution: Nanyang Technological University
Language: English
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spelling sg-ntu-dr.10356-1008042020-03-07T14:00:32Z Band structures and optical gain of strained GaAs[sub x]P[sub 1−x−y]N[sub y]/GaP quantum wells Zhu, Yuan-Hui Yu, Hongyu Fan, Weijun School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering In the framework of effective mass Hamiltonian of semiconductor quantum well structures and band anticrossing model, we investigated the band structures of fully strained GaAsxP1−x−yNy /GaP quantum wells. The GaAsxP1−x−yNy could be widely modified to be direct-band gap or indirect-band gap by changing the mole fraction of As and N in the well layer. We found that an increase in the N mole fraction in the well layer increases the TE mode optical gain very slightly. Published version 2013-12-09T01:43:11Z 2019-12-06T20:28:36Z 2013-12-09T01:43:11Z 2019-12-06T20:28:36Z 2011 2011 Journal Article Zhu, Y. H., Yu, H., & Fan, W. (2011). Band structures and optical gain of strained GaAs[sub x]P[sub 1−x−y]N[sub y]/GaP quantum wells. Applied physics letters, 98, 121112. 0003-6951 https://hdl.handle.net/10356/100804 http://hdl.handle.net/10220/18172 10.1063/1.3570630 en Applied physics letters © 2011 American Institute of Physics. This paper was published in Applied Physics Letters and is made available as an electronic reprint (preprint) with permission of American Institute of Physics. The paper can be found at the following official DOI: http://dx.doi.org/10.1063/1.3570630.  One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law. 3 p. application/pdf
institution Nanyang Technological University
building NTU Library
country Singapore
collection DR-NTU
language English
topic DRNTU::Engineering::Electrical and electronic engineering
spellingShingle DRNTU::Engineering::Electrical and electronic engineering
Zhu, Yuan-Hui
Yu, Hongyu
Fan, Weijun
Band structures and optical gain of strained GaAs[sub x]P[sub 1−x−y]N[sub y]/GaP quantum wells
description In the framework of effective mass Hamiltonian of semiconductor quantum well structures and band anticrossing model, we investigated the band structures of fully strained GaAsxP1−x−yNy /GaP quantum wells. The GaAsxP1−x−yNy could be widely modified to be direct-band gap or indirect-band gap by changing the mole fraction of As and N in the well layer. We found that an increase in the N mole fraction in the well layer increases the TE mode optical gain very slightly.
author2 School of Electrical and Electronic Engineering
author_facet School of Electrical and Electronic Engineering
Zhu, Yuan-Hui
Yu, Hongyu
Fan, Weijun
format Article
author Zhu, Yuan-Hui
Yu, Hongyu
Fan, Weijun
author_sort Zhu, Yuan-Hui
title Band structures and optical gain of strained GaAs[sub x]P[sub 1−x−y]N[sub y]/GaP quantum wells
title_short Band structures and optical gain of strained GaAs[sub x]P[sub 1−x−y]N[sub y]/GaP quantum wells
title_full Band structures and optical gain of strained GaAs[sub x]P[sub 1−x−y]N[sub y]/GaP quantum wells
title_fullStr Band structures and optical gain of strained GaAs[sub x]P[sub 1−x−y]N[sub y]/GaP quantum wells
title_full_unstemmed Band structures and optical gain of strained GaAs[sub x]P[sub 1−x−y]N[sub y]/GaP quantum wells
title_sort band structures and optical gain of strained gaas[sub x]p[sub 1−x−y]n[sub y]/gap quantum wells
publishDate 2013
url https://hdl.handle.net/10356/100804
http://hdl.handle.net/10220/18172
_version_ 1681041908104691712

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