Band structures and optical gain of strained GaAs[sub x]P[sub 1−x−y]N[sub y]/GaP quantum wells
In the framework of effective mass Hamiltonian of semiconductor quantum well structures and band anticrossing model, we investigated the band structures of fully strained GaAsxP1−x−yNy /GaP quantum wells. The GaAsxP1−x−yNy could be widely modified to be direct-band gap or indirect-band gap by cha...
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| Main Authors: | , , |
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| Other Authors: | |
| Format: | Article |
| Language: | English |
| Published: |
2013
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/100804 http://hdl.handle.net/10220/18172 |
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| Institution: | Nanyang Technological University |
| Language: | English |
| Summary: | In the framework of effective mass Hamiltonian of semiconductor quantum well structures and band
anticrossing model, we investigated the band structures of fully strained GaAsxP1−x−yNy /GaP
quantum wells. The GaAsxP1−x−yNy could be widely modified to be direct-band gap or indirect-band
gap by changing the mole fraction of As and N in the well layer. We found that an increase in the
N mole fraction in the well layer increases the TE mode optical gain very slightly. |
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