Valence hole subbands and optical gain spectra of GaN/Ga1-xAlxN strained quantum wells

• Main Authors: Li, M. F., Chong, T. C., Fan, Weijun
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2013
• Subjects: DRNTU::Engineering::Electrical and electronic engineering
• Online Access: https://hdl.handle.net/10356/100690; http://hdl.handle.net/10220/18007
• Institution: Nanyang Technological University

The valence hole subbands, TE and TM mode optical gains, transparency carrier density, and radiative current density of the zinc‐blende GaN/Ga0.85Al0.15N strained quantum well (100 Å well width) have been investigated using a 6×6 Hamiltonian model including the heavy hole, light hole, and spin‐orbit...