Giant and zero electron g factors of dilute nitride semiconductor nanowires

• المؤلفون الرئيسيون: Zhang, X. W., Li, S. S., Fan, Weijun, Xia, Jian-Bai
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2013
• الموضوعات: DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/100825; http://hdl.handle.net/10220/18131

The electronic structures and electron g factors of InSb1−sNs and GaAs1−sNs nanowires and bulk material under the magnetic and electric fields are investigated by using the ten-band k· p model. The nitrogen doping has direct and indirect effects on the g factors. A giant g factor with absolute va...