Giant and zero electron g factors of dilute nitride semiconductor nanowires
The electronic structures and electron g factors of InSb1−sNs and GaAs1−sNs nanowires and bulk material under the magnetic and electric fields are investigated by using the ten-band k· p model. The nitrogen doping has direct and indirect effects on the g factors. A giant g factor with absolute va...
Saved in:
Main Authors: | Zhang, X. W., Li, S. S., Fan, Weijun, Xia, Jian-Bai |
---|---|
Other Authors: | School of Electrical and Electronic Engineering |
Format: | Article |
Language: | English |
Published: |
2013
|
Subjects: | |
Online Access: | https://hdl.handle.net/10356/100825 http://hdl.handle.net/10220/18131 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | Nanyang Technological University |
Language: | English |
Similar Items
-
High and electric field tunable Curie temperature in diluted magnetic semiconductor nanowires and nanoslabs
by: Zhang, Xiu-Wen, et al.
Published: (2013) -
Dilute III-V nitride semiconductors and material systems : physics and technology
Published: (2017) -
Dilute magnetic semiconductor (DMS) materials for spintronics
by: Kok, Hui Jun.
Published: (2009) -
Synthesis of boron nitride nanowires
by: Chen, F., et al.
Published: (2011) -
Dilute nitride-based photodetectors : fabrication, characterization and performance
by: Xu, Zhe
Published: (2012)