RF modelling of semiconductor devices

RF modelling of semiconductor devices

This report focuses on the approaches to characterize the deep submicron-meter MOSFETs operating both in DC and in high frequency region with different dimensions.

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Bibliographic Details
Main Authors: Ma, Jian-Guo, Yeo, Kiat Seng, Do, Manh Anh
Other Authors: School of Electrical and Electronic Engineering
Format: Research Report
Published: 2008
Subjects:
DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
Online Access:http://hdl.handle.net/10356/2868
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Institution: Nanyang Technological University

Internet

http://hdl.handle.net/10356/2868

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