RF modelling of semiconductor devices

• Main Authors: Ma, Jian-Guo, Yeo, Kiat Seng, Do, Manh Anh
• 其他作者: School of Electrical and Electronic Engineering
• 格式: Research Report
• 出版: 2008
• 主題: DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
• 在線閱讀: http://hdl.handle.net/10356/2868
• 機構: Nanyang Technological University

This report focuses on the approaches to characterize the deep submicron-meter MOSFETs operating both in DC and in high frequency region with different dimensions.