RF modelling of semiconductor devices
This report focuses on the approaches to characterize the deep submicron-meter MOSFETs operating both in DC and in high frequency region with different dimensions.
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| Main Authors: | , , |
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| Other Authors: | |
| Format: | Research Report |
| Published: |
2008
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| Subjects: | |
| Online Access: | http://hdl.handle.net/10356/2868 |
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| Institution: | Nanyang Technological University |