Valence band structure of ultrathin silicon and germanium channels in metal-oxide-semiconductor field-effect transistors

• Main Authors: Low, Tony, Li, M. F., Yeo, Y. C., Fan, Weijun, Ng, S. T., Kwong, Dim Lee
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2013
• Subjects: DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
• Online Access: https://hdl.handle.net/10356/100790; http://hdl.handle.net/10220/17997
• Institution: Nanyang Technological University

The ultrathin body (UTB) silicon-on-insulator metal-oxide-semiconductor field-effect transistor MOSFET is promising for sub-50-nm complementary metal-oxide semiconductor technologies. To explore a high-mobility channel for this technology, this paper presents an examination of Si and Ge hole sub-ban...