Valence band structure of ultrathin silicon and germanium channels in metal-oxide-semiconductor field-effect transistors

The ultrathin body (UTB) silicon-on-insulator metal-oxide-semiconductor field-effect transistor MOSFET is promising for sub-50-nm complementary metal-oxide semiconductor technologies. To explore a high-mobility channel for this technology, this paper presents an examination of Si and Ge hole sub-ban...

Full description

Saved in:
Bibliographic Details
Main Authors: Low, Tony, Li, M. F., Yeo, Y. C., Fan, Weijun, Ng, S. T., Kwong, Dim Lee
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2013
Subjects:
Online Access:https://hdl.handle.net/10356/100790
http://hdl.handle.net/10220/17997
Tags: Add Tag
No Tags, Be the first to tag this record!
Institution: Nanyang Technological University
Language: English

Similar Items