Size, composition and thermal induced band gap changing of nanostructured semiconductors

• Main Author: Nay Myo Tun
• Other Authors: Sun Changqing
• Format: Final Year Project
• Language: English
• Published: 2010
• Subjects: DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
• Online Access: http://hdl.handle.net/10356/20749
• Institution: Nanyang Technological University

A nanostructure semiconductor can be divided into three groups such as group-IV from elemental, III-V and II-VI from compound materials. The band gap energy changes effectively if a function of temperature changes because the crystal lattice expansion and the inter-atomic bonds are weakened. A weake...