Size, composition and thermal induced band gap changing of nanostructured semiconductors

• المؤلف الرئيسي: Nay Myo Tun
• مؤلفون آخرون: Sun Changqing
• التنسيق: Final Year Project
• اللغة: English
• منشور في: 2010
• الموضوعات: DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
• الوصول للمادة أونلاين: http://hdl.handle.net/10356/20749

A nanostructure semiconductor can be divided into three groups such as group-IV from elemental, III-V and II-VI from compound materials. The band gap energy changes effectively if a function of temperature changes because the crystal lattice expansion and the inter-atomic bonds are weakened. A weake...