Wide-band gap device based battery charger

• Main Author: Muhammad Sharizad bin Safiee
• Other Authors: Amer M. Y. M. Ghias
• Format: Final Year Project
• Language: English
• Published: Nanyang Technological University 2023
• Subjects: Engineering::Electrical and electronic engineering::Semiconductors
• Online Access: https://hdl.handle.net/10356/167615
• Institution: Nanyang Technological University

Wide-Band Gap devices, such as Silicon Carbide (SiC) and Gallium Nitride (GaN), have emerged as promising alternatives to traditional power semiconductors for high-performance and energy-efficient power conversion applications. This study focuses on the use of WBG devices in battery chargers, whi...