Improved thin film quality and photoluminescence of N-doped epitaxial germanium-on-silicon using MOCVD

• Main Authors: Zhou, Guangnan, Covian, Alejandra V. Cuervo, Lee, Kwang Hong, Han, Han, Tan, Chuan Seng, Liu, Jifeng, Xia, Maggie Guangrui
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2020
• Subjects: Engineering::Electrical and electronic engineering::Semiconductors; Germanium-on-Si; Photoluminescence
• Online Access: https://hdl.handle.net/10356/141364
• Institution: Nanyang Technological University

This paper addresses one of the key issues in the scientific community of Si photonics: thin-film quality and the light emission properties of band-engineered n+ Germanium-on-Silicon (Ge-on-Si). Compared to the traditional delta doping approach, which was utilized in the first electrically-pumped Ge...