Improved thin film quality and photoluminescence of N-doped epitaxial germanium-on-silicon using MOCVD
This paper addresses one of the key issues in the scientific community of Si photonics: thin-film quality and the light emission properties of band-engineered n+ Germanium-on-Silicon (Ge-on-Si). Compared to the traditional delta doping approach, which was utilized in the first electrically-pumped Ge...
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Main Authors: | Zhou, Guangnan, Covian, Alejandra V. Cuervo, Lee, Kwang Hong, Han, Han, Tan, Chuan Seng, Liu, Jifeng, Xia, Maggie Guangrui |
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Other Authors: | School of Electrical and Electronic Engineering |
Format: | Article |
Language: | English |
Published: |
2020
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Subjects: | |
Online Access: | https://hdl.handle.net/10356/141364 |
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Institution: | Nanyang Technological University |
Language: | English |
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