Bias temperature instability of nano-scale silicon transistors
Negative Bias Temperature Instability (NBTI) has been a critical reliability issue for today’s sub-micron devices. It was experimentally noted that NBTI is a crucial limiting performance factor for PMOSFET. Thus, it defines that lifetime of the PMOSFET in the circuit. Under NBTI stress, the PMOSF...
Saved in:
| Main Author: | |
|---|---|
| Other Authors: | |
| Format: | Theses and Dissertations |
| Language: | English |
| Published: |
2014
|
| Subjects: | |
| Online Access: | http://hdl.handle.net/10356/55442 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Institution: | Nanyang Technological University |
| Language: | English |