Bias temperature instability of nano-scale silicon transistors

• Main Author: Ho, Terence Jun Jie
• Other Authors: A S Madhukumar
• Format: Theses and Dissertations
• Language: English
• Published: 2014
• Subjects: DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
• Online Access: http://hdl.handle.net/10356/55442
• Institution: Nanyang Technological University

Negative Bias Temperature Instability (NBTI) has been a critical reliability issue for today’s sub-micron devices. It was experimentally noted that NBTI is a crucial limiting performance factor for PMOSFET. Thus, it defines that lifetime of the PMOSFET in the circuit. Under NBTI stress, the PMOSF...