Band structure and optical properties of uniaxial tensile strained Ge and Ge quantum well

• Main Authors: Fan, Weijun, Tan, Chuan Seng, Wang, Qi Jie, Nam, Donguk, Zhang, Dao Hua
• Other Authors: School of Electrical and Electronic Engineering
• Format: Conference or Workshop Item
• Language: English
• Published: 2020
• Subjects: Engineering::Materials; Engineering::Electrical and electronic engineering; Ge Semiconductor
• Online Access: http://ccmr2019.org/; https://hdl.handle.net/10356/145169
• Institution: Nanyang Technological University

Ge semiconductor has received great attention recently due to its potential application in optoelectronic devices, such as Laser and LED diodes. Ge is an indirect band gap semiconductor, which results in a poor optical transition probability. However, the laser emission from the direct band transiti...