Highly tensile-strained self-assembled Ge quantum dots on InP substrates for integrated light sources

• Main Authors: Chen, Qimiao, Zhang, Liyao, Song, Yuxin, Chen, Xiren, Koelling, Sebastian, Zhang, Zhenpu, Li, Yaoyao, Koenraad, Paul M., Shao, Jun, Tan, Chuan Seng, Wang, Shumin, Gong, Qian
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2021
• Subjects: Engineering::Electrical and electronic engineering::Semiconductors; GeSn QD; Mid-IR Light Source
• Online Access: https://hdl.handle.net/10356/146062
• Institution: Nanyang Technological University

Highly tensile-strained Ge quantum dots (TS-Ge-QDs) emitting structures with different size were successfully grown on InP substrates by molecular beam epitaxy. Defect-free samples with TS-Ge-QDs were confirmed by transmission electron microscopy. Finite element modeling indicates a maximum tensile...