Band structure and optical properties of uniaxial tensile strained Ge and Ge quantum well

• Main Authors: Fan, Weijun, Tan, Chuan Seng, Wang, Qi Jie, Nam, Donguk, Zhang, Dao Hua
• Other Authors: School of Electrical and Electronic Engineering
• Format: Conference or Workshop Item
• Language: English
• Published: 2020
• Subjects: Engineering::Materials; Engineering::Electrical and electronic engineering; Ge Semiconductor
• Online Access: http://ccmr2019.org/; https://hdl.handle.net/10356/145169
• Institution: Nanyang Technological University

Ge semiconductor has received great attention recently due to its potential application in optoelectronic devices, such as Laser and LED diodes. Ge is an indirect band gap semiconductor, which results in a poor optical transition probability. However, the laser emission from the direct band transition at room temperature was observed and reported in heavy n-type doped tensile strained Ge-on-Si material.[1] In this work, we will investigate the uniaxial tensile strain effect on the band structure and optical properties of Ge and Ge quantum well (QW) by using k.p method.[2-5]