Band structure of Ge 1− x Sn x alloy : a full-zone 30-band k · p model

• المؤلفون الرئيسيون: Song, Zhigang, Fan, Weijun, Tan, Chuan Seng, Wang, Qijie, Nam, Donguk, Zhang, Dao Hua, Sun, Greg
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2019
• الموضوعات: GeSn; Band Structure; Engineering::Electrical and electronic engineering::Semiconductors
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/93535; http://hdl.handle.net/10220/49938
• المؤسسة: Nanyang Technological University

A full-zone 30-band k · p model is developed as an efficient and reliable tool to compute electronic band structure in Ge1−xSnx alloy. The model was first used to reproduce the electronic band structures in Ge and α-Sn obtained with empirical tight binding and ab initio methods. Input parameters for...