GeSn/GaAs hetero-structure by magnetron sputtering

• المؤلفون الرئيسيون: Qian, Li, Tong, Jinchao, Suo, Fei, Liu, Lin, Fan, Weijun, Luo, Yu, Zhang, Dao Hua
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2021
• الموضوعات: Engineering::Electrical and electronic engineering; GeSn; Heterostructure
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/154456
• المؤسسة: Nanyang Technological University

We report high quality GeSn/GaAs heterostructure photodetectors grown by a modified magnetron sputtering system. A metal-semiconductor-metal photoconductor is fabricated to examine the ability of photodetection for GeSn alloy. Then the GeSn/GaAs heterostructure photodetector is first demonstrated wi...