GeSn/GaAs hetero-structure by magnetron sputtering

• Main Authors: Qian, Li, Tong, Jinchao, Suo, Fei, Liu, Lin, Fan, Weijun, Luo, Yu, Zhang, Dao Hua
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2021
• Subjects: Engineering::Electrical and electronic engineering; GeSn; Heterostructure
• Online Access: https://hdl.handle.net/10356/154456
• Institution: Nanyang Technological University

We report high quality GeSn/GaAs heterostructure photodetectors grown by a modified magnetron sputtering system. A metal-semiconductor-metal photoconductor is fabricated to examine the ability of photodetection for GeSn alloy. Then the GeSn/GaAs heterostructure photodetector is first demonstrated with a detectivity of.8\times 10^{9}$ Jones achieved at 1450 nm under an applied reverse voltage bias of -0.1 V, which is comparable to or even better than the GeSn-based photodetectors grown by chemical vapor deposition. The work provides an alternative technique for low cost and large-area fabrication of GeSn based devices.