Band structure of Ge 1− x Sn x alloy : a full-zone 30-band k · p model

A full-zone 30-band k · p model is developed as an efficient and reliable tool to compute electronic band structure in Ge1−xSnx alloy. The model was first used to reproduce the electronic band structures in Ge and α-Sn obtained with empirical tight binding and ab initio methods. Input parameters for...

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Main Authors: Song, Zhigang, Fan, Weijun, Tan, Chuan Seng, Wang, Qijie, Nam, Donguk, Zhang, Dao Hua, Sun, Greg
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2019
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Online Access:https://hdl.handle.net/10356/93535
http://hdl.handle.net/10220/49938
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Institution: Nanyang Technological University
Language: English
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spelling sg-ntu-dr.10356-935352020-09-21T04:41:34Z Band structure of Ge 1− x Sn x alloy : a full-zone 30-band k · p model Song, Zhigang Fan, Weijun Tan, Chuan Seng Wang, Qijie Nam, Donguk Zhang, Dao Hua Sun, Greg School of Electrical and Electronic Engineering GeSn Band Structure Engineering::Electrical and electronic engineering::Semiconductors A full-zone 30-band k · p model is developed as an efficient and reliable tool to compute electronic band structure in Ge1−xSnx alloy. The model was first used to reproduce the electronic band structures in Ge and α-Sn obtained with empirical tight binding and ab initio methods. Input parameters for the 30-band k · p model are carefully calibrated against prior empirical predications and experimental data. Important material properties such as effective mass for electrons and holes, Luttinger parameters, and density of states are obtained for Ge1−xSnx alloy with the composition range 0 < x < 0.3. The 30-band k · p model that requires far less computing resources is a necessary capability for optimization of sophisticated devices made from Ge1−xSnx alloy with a large parameter space to explore. National Research Foundation (NRF) Published version WJ Fan acknowledges the funding support (NRF–CRP19–2017–01). The computation of this work was partially performed on resources of the National Supercomputing Centre, Singapore. G Sun acknowledges the grant support (FA9550-17-1-0354) from the Air Force Office of Scientific Research. 2019-09-16T06:43:56Z 2019-12-06T18:41:03Z 2019-09-16T06:43:56Z 2019-12-06T18:41:03Z 2019 Journal Article Song, Z., Fan, W., Tan, C. S., Wang, Q., Nam, D., Zhang, D. H., & Sun, G. (2019). Band structure of Ge 1− x Sn x alloy : a full-zone 30-band k · p model. New Journal of Physics, 21(7), 073037-. doi:10.1088/1367-2630/ab306f 1367-2630 https://hdl.handle.net/10356/93535 http://hdl.handle.net/10220/49938 10.1088/1367-2630/ab306f en NRF–CRP19–2017–01 New Journal of Physics New Journal of Physics © 2019 The Author(s). Published by IOP Publishing Ltd on behalf of the Institute of Physics and Deutsche Physikalische Gesellschaft. Original content from this work may be used under the terms of the Creative Commons Attribution 3.0 licence. Any further distribution of this work must maintain attribution to the author(s) and the title of the work, journal citation and DOI. 11 p. application/pdf
institution Nanyang Technological University
building NTU Library
country Singapore
collection DR-NTU
language English
topic GeSn
Band Structure
Engineering::Electrical and electronic engineering::Semiconductors
spellingShingle GeSn
Band Structure
Engineering::Electrical and electronic engineering::Semiconductors
Song, Zhigang
Fan, Weijun
Tan, Chuan Seng
Wang, Qijie
Nam, Donguk
Zhang, Dao Hua
Sun, Greg
Band structure of Ge 1− x Sn x alloy : a full-zone 30-band k · p model
description A full-zone 30-band k · p model is developed as an efficient and reliable tool to compute electronic band structure in Ge1−xSnx alloy. The model was first used to reproduce the electronic band structures in Ge and α-Sn obtained with empirical tight binding and ab initio methods. Input parameters for the 30-band k · p model are carefully calibrated against prior empirical predications and experimental data. Important material properties such as effective mass for electrons and holes, Luttinger parameters, and density of states are obtained for Ge1−xSnx alloy with the composition range 0 < x < 0.3. The 30-band k · p model that requires far less computing resources is a necessary capability for optimization of sophisticated devices made from Ge1−xSnx alloy with a large parameter space to explore.
author2 School of Electrical and Electronic Engineering
author_facet School of Electrical and Electronic Engineering
Song, Zhigang
Fan, Weijun
Tan, Chuan Seng
Wang, Qijie
Nam, Donguk
Zhang, Dao Hua
Sun, Greg
format Article
author Song, Zhigang
Fan, Weijun
Tan, Chuan Seng
Wang, Qijie
Nam, Donguk
Zhang, Dao Hua
Sun, Greg
author_sort Song, Zhigang
title Band structure of Ge 1− x Sn x alloy : a full-zone 30-band k · p model
title_short Band structure of Ge 1− x Sn x alloy : a full-zone 30-band k · p model
title_full Band structure of Ge 1− x Sn x alloy : a full-zone 30-band k · p model
title_fullStr Band structure of Ge 1− x Sn x alloy : a full-zone 30-band k · p model
title_full_unstemmed Band structure of Ge 1− x Sn x alloy : a full-zone 30-band k · p model
title_sort band structure of ge 1− x sn x alloy : a full-zone 30-band k · p model
publishDate 2019
url https://hdl.handle.net/10356/93535
http://hdl.handle.net/10220/49938
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