Band structure of Ge 1− x Sn x alloy : a full-zone 30-band k · p model

A full-zone 30-band k · p model is developed as an efficient and reliable tool to compute electronic band structure in Ge1−xSnx alloy. The model was first used to reproduce the electronic band structures in Ge and α-Sn obtained with empirical tight binding and ab initio methods. Input parameters for...

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Main Authors: Song, Zhigang, Fan, Weijun, Tan, Chuan Seng, Wang, Qijie, Nam, Donguk, Zhang, Dao Hua, Sun, Greg
其他作者: School of Electrical and Electronic Engineering
格式: Article
語言:English
出版: 2019
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在線閱讀:https://hdl.handle.net/10356/93535
http://hdl.handle.net/10220/49938
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機構: Nanyang Technological University
語言: English