Memory effect of Al-rich AlN films synthesized with rf magnetron sputtering
Al-rich AlN thin film, which is deposited onto n-type Si substrate by radio frequency sputtering of Al target in an argon and Nitrogen gas mixture, can exhibit a large memory effect as a result of charge trapping in the Al nanoparticles/nanoclusters embedded in the AlN matrix. For the metal-insulato...
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Main Authors: | , , , , , |
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Other Authors: | |
Format: | Article |
Language: | English |
Published: |
2010
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Subjects: | |
Online Access: | https://hdl.handle.net/10356/90683 http://hdl.handle.net/10220/6357 |
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Institution: | Nanyang Technological University |
Language: | English |