Memory effect of Al-rich AlN films synthesized with rf magnetron sputtering

Al-rich AlN thin film, which is deposited onto n-type Si substrate by radio frequency sputtering of Al target in an argon and Nitrogen gas mixture, can exhibit a large memory effect as a result of charge trapping in the Al nanoparticles/nanoclusters embedded in the AlN matrix. For the metal-insulato...

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Bibliographic Details
Main Authors: Zhao, P., Liu, Yang, Chen, Tupei, Zhang, Sam, Fu, Yong Qing, Fung, Stevenson Hon Yuen
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2010
Subjects:
Online Access:https://hdl.handle.net/10356/90683
http://hdl.handle.net/10220/6357
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Institution: Nanyang Technological University
Language: English