Design of a scalable RF model for deep sub-micron mosfets

• Main Author: Tong, Ah Fatt
• Other Authors: Yeo Kiat Seng
• Format: Theses and Dissertations
• Language: English
• Published: 2010
• Subjects: DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
• Online Access: https://hdl.handle.net/10356/20850
• Institution: Nanyang Technological University

In order to achieve first pass design success and optimized RF circuit design, the process design kit (PDK) provided by the foundry must be equipped with accurate and scalable RF models for circuit simulation and optimization process. However, existing RF MOSFET models provided by most foundries are...