Development of electron beam lithography process for the design and fabrication of sub-micron GaAs-based RF devices
This report presents the device fabrication and characterisation of the InxGa1-xP/In0.20Ga0.80As HEMT.
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| Format: | Research Report |
| Published: |
2008
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| Online Access: | http://hdl.handle.net/10356/3038 |
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| Institution: | Nanyang Technological University |