Investigation of ultra high-speed heterojunction bipolar transistors fabricated in molecular beam epitaxy technology

Investigation of ultra high-speed heterojunction bipolar transistors fabricated in molecular beam epitaxy technology

The objective is to develop a baseline fabrication technology for GaAs-based Heterojunction Bipolar Transistor (HBTs) based on our existing clean room facilities.

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Bibliographic Details
Main Author: Yoon, Soon Fatt.
Other Authors: School of Electrical and Electronic Engineering
Format: Research Report
Published: 2008
Subjects:
DRNTU::Engineering::Electrical and electronic engineering::Electronic packaging
Online Access:http://hdl.handle.net/10356/2988
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Institution: Nanyang Technological University

Internet

http://hdl.handle.net/10356/2988

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