Investigation of ultra high-speed heterojunction bipolar transistors fabricated in molecular beam epitaxy technology

• المؤلف الرئيسي: Yoon, Soon Fatt.
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: Research Report
• منشور في: 2008
• الموضوعات: DRNTU::Engineering::Electrical and electronic engineering::Electronic packaging
• الوصول للمادة أونلاين: http://hdl.handle.net/10356/2988
• المؤسسة: Nanyang Technological University

The objective is to develop a baseline fabrication technology for GaAs-based Heterojunction Bipolar Transistor (HBTs) based on our existing clean room facilities.