Investigation of ultra high-speed heterojunction bipolar transistors fabricated in molecular beam epitaxy technology

The objective is to develop a baseline fabrication technology for GaAs-based Heterojunction Bipolar Transistor (HBTs) based on our existing clean room facilities.

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Bibliographic Details
Main Author:	Yoon, Soon Fatt.
Other Authors:	School of Electrical and Electronic Engineering
Format:	Research Report
Published:	2008
Subjects:	DRNTU::Engineering::Electrical and electronic engineering::Electronic packaging
Online Access:	http://hdl.handle.net/10356/2988
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Institution:	Nanyang Technological University

id	sg-ntu-dr.10356-2988
record_format	dspace
spelling	sg-ntu-dr.10356-29882023-03-04T03:23:33Z Investigation of ultra high-speed heterojunction bipolar transistors fabricated in molecular beam epitaxy technology Yoon, Soon Fatt. School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering::Electronic packaging The objective is to develop a baseline fabrication technology for GaAs-based Heterojunction Bipolar Transistor (HBTs) based on our existing clean room facilities. 2008-09-17T09:18:16Z 2008-09-17T09:18:16Z 1998 1998 Research Report http://hdl.handle.net/10356/2988 Nanyang Technological University application/pdf
institution	Nanyang Technological University
building	NTU Library
continent	Asia
country	Singapore Singapore
content_provider	NTU Library
collection	DR-NTU
topic	DRNTU::Engineering::Electrical and electronic engineering::Electronic packaging
spellingShingle	DRNTU::Engineering::Electrical and electronic engineering::Electronic packaging Yoon, Soon Fatt. Investigation of ultra high-speed heterojunction bipolar transistors fabricated in molecular beam epitaxy technology
description	The objective is to develop a baseline fabrication technology for GaAs-based Heterojunction Bipolar Transistor (HBTs) based on our existing clean room facilities.
author2	School of Electrical and Electronic Engineering
author_facet	School of Electrical and Electronic Engineering Yoon, Soon Fatt.
format	Research Report
author	Yoon, Soon Fatt.
author_sort	Yoon, Soon Fatt.
title	Investigation of ultra high-speed heterojunction bipolar transistors fabricated in molecular beam epitaxy technology
title_short	Investigation of ultra high-speed heterojunction bipolar transistors fabricated in molecular beam epitaxy technology
title_full	Investigation of ultra high-speed heterojunction bipolar transistors fabricated in molecular beam epitaxy technology
title_fullStr	Investigation of ultra high-speed heterojunction bipolar transistors fabricated in molecular beam epitaxy technology
title_full_unstemmed	Investigation of ultra high-speed heterojunction bipolar transistors fabricated in molecular beam epitaxy technology
title_sort	investigation of ultra high-speed heterojunction bipolar transistors fabricated in molecular beam epitaxy technology
publishDate	2008
url	http://hdl.handle.net/10356/2988
_version_	1759856827411988480

Investigation of ultra high-speed heterojunction bipolar transistors fabricated in molecular beam epitaxy technology

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